Part Details for IRFR224 by Vishay Intertechnologies
Overview of IRFR224 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR224
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2550 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 2040 |
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$0.5250 / $1.5000 | Buy Now |
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Chip1Cloud | Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A) | MOSFET N-CH 250V 3.8A DPAK | 9900 |
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RFQ |
Part Details for IRFR224
IRFR224 CAD Models
IRFR224 Part Data Attributes
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IRFR224
Vishay Intertechnologies
Buy Now
Datasheet
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IRFR224
Vishay Intertechnologies
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 3.8 A | |
Drain-source On Resistance-Max | 1.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR224
This table gives cross-reference parts and alternative options found for IRFR224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR224TRLPBF | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR224 vs IRFR224TRLPBF |
IRFR224 | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | IRFR224 vs IRFR224 |
IRFR224 | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR224 vs IRFR224 |
IRFR224TRR | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR224 vs IRFR224TRR |
IRFR224PBF | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR224 vs IRFR224PBF |
IRFR224PBF | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR224 vs IRFR224PBF |
IRFR224 | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | IRFR224 vs IRFR224 |
IRFR224TRPBF | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR224 vs IRFR224TRPBF |
IRFR224TRLPBF | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR224 vs IRFR224TRLPBF |