Part Details for IRFR3411TRPBF by Infineon Technologies AG
Overview of IRFR3411TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR3411TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9131
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Newark | Mosfet, N-Ch, 100V, 32A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:32A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.036Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFR3411TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3501 |
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$0.6380 / $1.4700 | Buy Now |
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DISTI #
IRFR3411TRPBFCT-ND
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DigiKey | MOSFET N-CH 100V 32A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11073 In Stock |
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$0.5819 / $1.5500 | Buy Now |
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DISTI #
942-IRFR3411TRPBF
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Mouser Electronics | MOSFET MOSFT 100V 32A 44mOhm 48nC RoHS: Compliant | 3653 |
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$0.5810 / $1.4700 | Buy Now |
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DISTI #
70017761
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 36 Milliohms, ID 32A, D-Pak (TO-252AA),-55C | Infineon IRFR3411TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.8800 / $1.1000 | RFQ |
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Future Electronics | Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 30000Reel |
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$0.2500 / $0.2650 | Buy Now |
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Future Electronics | Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 10000Reel |
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$0.2650 / $0.2800 | Buy Now |
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Rochester Electronics | IRFR3411 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 16000 |
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$0.5759 / $0.6775 | Buy Now |
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DISTI #
IRFR3411TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3411TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 14000 |
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$0.5227 / $0.6389 | Buy Now |
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DISTI #
IRFR3411TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 56A, 130W, DPAK Min Qty: 2000 | 0 |
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$0.4750 | RFQ |
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Ameya Holding Limited | Min Qty: 20 | 1200 |
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$1.2614 | Buy Now |
Part Details for IRFR3411TRPBF
IRFR3411TRPBF CAD Models
IRFR3411TRPBF Part Data Attributes
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IRFR3411TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3411TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3411TRPBF
This table gives cross-reference parts and alternative options found for IRFR3411TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3411TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR3411TRLPBF | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3411TRPBF vs IRFR3411TRLPBF |
| IRFR3411TR | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3411TRPBF vs IRFR3411TR |
| IRFR3411 | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3411TRPBF vs IRFR3411 |
| IRFR3411TRRPBF | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3411TRPBF vs IRFR3411TRRPBF |
| IRFR3411TRL | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3411TRPBF vs IRFR3411TRL |
| IRFR3411TRR | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3411TRPBF vs IRFR3411TRR |
| IRFR3411TRPBF | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3411TRPBF vs IRFR3411TRPBF |
| IRFR3411TRHR | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | International Rectifier | IRFR3411TRPBF vs IRFR3411TRHR |