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Part Details for IRFS11N50APBF by Vishay Intertechnologies
Overview of IRFS11N50APBF by Vishay Intertechnologies
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFS11N50APBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2646
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Newark | Mosfet Transistor, N Channel, 11 A, 500 V, 520 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFS11N50APBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 8191 |
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$1.6800 / $2.9200 | Buy Now |
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DISTI #
844-IRFS11N50APBF
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Mouser Electronics | MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant | 1373 |
|
$1.3200 / $2.5400 | Buy Now |
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DISTI #
E02:0323_00193780
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Arrow Electronics | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2310 | Europe - 671 |
|
$1.2436 / $2.0857 | Buy Now |
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DISTI #
V36:1790_09218974
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Arrow Electronics | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2333 | Americas - 152 |
|
$1.3170 / $2.5150 | Buy Now |
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DISTI #
V99:2348_09218974
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Arrow Electronics | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2216 | Americas - 100 |
|
$1.4190 / $1.9110 | Buy Now |
|
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Future Electronics | IRFS11N50A Series 500 V 7 A 0.52 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Bulk | 0Bulk |
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$1.3300 / $1.5100 | Buy Now |
|
|
Future Electronics | IRFS11N50A Series 500 V 7 A 0.52 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Bulk | 0Bulk |
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$1.3300 / $1.5100 | Buy Now |
|
|
Onlinecomponents.com |
354 Partner Stock |
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$1.4400 / $4.9100 | Buy Now | |
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DISTI #
66979761
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Verical | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK Min Qty: 6 Package Multiple: 1 Date Code: 2310 | Americas - 666 |
|
$1.2408 / $2.0810 | Buy Now |
|
DISTI #
73574620
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Verical | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK Min Qty: 5 Package Multiple: 1 Date Code: 2333 | Americas - 152 |
|
$1.3170 / $2.5150 | Buy Now |
Part Details for IRFS11N50APBF
IRFS11N50APBF CAD Models
IRFS11N50APBF Part Data Attributes
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IRFS11N50APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFS11N50APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 275 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.52 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS11N50APBF
This table gives cross-reference parts and alternative options found for IRFS11N50APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS11N50APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS11N50APBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS11N50APBF vs IRFS11N50APBF |
| IRFS11N50ATRL | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRFS11N50APBF vs IRFS11N50ATRL |
| IRFS11N50ATRRPBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS11N50APBF vs IRFS11N50ATRRPBF |
| SIHFS11N50A-GE3 | TRANSISTOR 11 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRFS11N50APBF vs SIHFS11N50A-GE3 |
| IRFS11N50ATRL | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS11N50APBF vs IRFS11N50ATRL |
| IRFS11N50ATRR | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS11N50APBF vs IRFS11N50ATRR |
| IRFS11N50ATRLP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | IRFS11N50APBF vs IRFS11N50ATRLP |
| IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRFS11N50APBF vs IRFS11N50A |
| IRFS11N50ATRRP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | IRFS11N50APBF vs IRFS11N50ATRRP |
| IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | IRFS11N50APBF vs IRFS11N50A |