Part Details for IRFS9N60APBF by Vishay Intertechnologies
Overview of IRFS9N60APBF by Vishay Intertechnologies
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFS9N60APBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
56AJ9904
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Newark | Mosfet, N-Ch, 600V, 9.2A, To-263 Rohs Compliant: Yes |Vishay IRFS9N60APBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1420 |
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$0.8850 | Buy Now |
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DISTI #
79AH3185
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Newark | Mosfet N-Channel 600V Rohs Compliant: No |Vishay IRFS9N60APBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 1000 |
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$1.5400 | Buy Now |
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DISTI #
63J7040
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Newark | N Channel Mosfet, 600V, 9.2A D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:9.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFS9N60APBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.7000 | Buy Now |
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DISTI #
844-IRFS9N60APBF
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Mouser Electronics | MOSFET 600V N-CH HEXFET D2PAK RoHS: Compliant | 2188 |
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$1.5700 / $3.1100 | Buy Now |
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DISTI #
E02:0323_00021439
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Arrow Electronics | Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2337 | Europe - 532 |
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$1.3040 / $2.3805 | Buy Now |
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DISTI #
V36:1790_09218977
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Arrow Electronics | Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2337 | Americas - 452 |
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$1.4560 / $3.0590 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 150100Tube |
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$1.3800 / $1.5200 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 5640Tube |
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$1.3800 / $1.5700 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.3800 / $1.5700 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.3800 / $1.5200 | Buy Now |
Part Details for IRFS9N60APBF
IRFS9N60APBF CAD Models
IRFS9N60APBF Part Data Attributes:
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IRFS9N60APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFS9N60APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9.2 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS9N60APBF
This table gives cross-reference parts and alternative options found for IRFS9N60APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS9N60APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS9N60ATRRPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS9N60APBF vs IRFS9N60ATRRPBF |
| IRFS9N60ATRR | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS9N60APBF vs IRFS9N60ATRR |
| SIHFS9N60A-GE3 | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRFS9N60APBF vs SIHFS9N60A-GE3 |
| IRFS9N60ATRLPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFS9N60APBF vs IRFS9N60ATRLPBF |
| IRFS9N60ATRRPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFS9N60APBF vs IRFS9N60ATRRPBF |
| IRFS9N60ATRLPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS9N60APBF vs IRFS9N60ATRLPBF |
| IRFS9N60A | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS9N60APBF vs IRFS9N60A |
| IRFS9N60ATRLPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRFS9N60APBF vs IRFS9N60ATRLPBF |
| IRFS9N60APBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFS9N60APBF vs IRFS9N60APBF |
| IRFS9N60A | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | IRFS9N60APBF vs IRFS9N60A |