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Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IRFSL7440PBF-ND
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DigiKey | MOSFET N CH 40V 120A TO-262 Min Qty: 1 Lead time: 12 Weeks Container: Tube |
994 In Stock |
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$0.6831 / $1.6300 | Buy Now |
DISTI #
IRFSL7440PBF
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Avnet Americas | Trans MOSFET N-CH 40V 208A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRFSL7440PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.6148 / $0.7514 | Buy Now |
DISTI #
942-IRFSL7440PBF
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Mouser Electronics | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 RoHS: Compliant | 7345 |
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$0.6830 / $1.6300 | Buy Now |
DISTI #
70394792
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RS | IRFSL7440PBF N-channel MOSFET Transistor, 208 A, 40 V, 3-Pin TO-262 | Infineon IRFSL7440PBF RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Container: Bulk | 0 |
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$1.0200 / $1.2700 | RFQ |
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Future Electronics | Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 6000Tube |
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$0.3900 / $0.4600 | Buy Now |
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Future Electronics | Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.6700 / $0.7950 | Buy Now |
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Bristol Electronics | Min Qty: 3 | 70 |
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$1.3125 / $2.1000 | Buy Now |
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Quest Components | 56 |
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$1.0500 / $2.8000 | Buy Now | |
DISTI #
IRFSL7440PBF
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Avnet Americas | Trans MOSFET N-CH 40V 208A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRFSL7440PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.6148 / $0.7514 | Buy Now |
DISTI #
IRFSL7440PBF
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TME | Transistor: N-MOSFET, unipolar, 40V, 147A, Idm: 772A, 208W, TO262 Min Qty: 1 | 132 |
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$0.7100 / $1.0600 | Buy Now |
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IRFSL7440PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFSL7440PBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 238 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 772 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |