Part Details for IRFU3607PBF by Infineon Technologies AG
Overview of IRFU3607PBF by Infineon Technologies AG
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFU3607PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH8481
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Newark | Trench 40 Min Qty: 75 Package Multiple: 1 Date Code: 0 Container: Bulk | 66000 |
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$0.6990 / $1.2400 | Buy Now |
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DISTI #
11N7916
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Newark | Mosfet Transistor, N Channel, 56 A, 75 V, 7.34 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFU3607PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2264 |
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$0.7120 / $1.5300 | Buy Now |
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DISTI #
IRFU3607PBF-ND
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DigiKey | MOSFET N-CH 75V 56A IPAK Min Qty: 1 Lead time: 12 Weeks Container: Tube |
723 In Stock |
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$0.6713 / $1.6000 | Buy Now |
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DISTI #
IRFU3607PBF
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU3607PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 66000 |
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$0.4945 / $0.5303 | Buy Now |
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DISTI #
942-IRFU3607PBF
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Mouser Electronics | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg RoHS: Compliant | 12704 |
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$0.6850 / $1.5200 | Buy Now |
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DISTI #
E02:0323_00175763
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Arrow Electronics | Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2412 | Europe - 8651 |
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$0.5102 / $1.0425 | Buy Now |
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DISTI #
V36:1790_13892557
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Arrow Electronics | Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2329 | Americas - 3165 |
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$0.6453 / $1.4853 | Buy Now |
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DISTI #
V99:2348_13892557
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Arrow Electronics | Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2234 | Americas - 54 |
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$0.5899 / $0.9298 | Buy Now |
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DISTI #
70017996
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RS | IRFU3607PBF N-channel MOSFET Transistor, 80 A, 75 V, 3-Pin IPAK | Infineon IRFU3607PBF RoHS: Not Compliant Min Qty: 75 Package Multiple: 1 Container: Bulk | 0 |
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$1.2600 / $1.4900 | RFQ |
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Future Electronics | Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-251AA RoHS: Compliant pbFree: Yes Min Qty: 675 Package Multiple: 675 Container: Tube | 3825Tube |
|
$0.3300 / $0.3550 | Buy Now |
Part Details for IRFU3607PBF
IRFU3607PBF CAD Models
IRFU3607PBF Part Data Attributes:
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IRFU3607PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFU3607PBF
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 310 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU3607PBF
This table gives cross-reference parts and alternative options found for IRFU3607PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU3607PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB3607PBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFU3607PBF vs IRFB3607PBF |
| AUIRFR3607 | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRFU3607PBF vs AUIRFR3607 |
| IRFR3607TRPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFU3607PBF vs IRFR3607TRPBF |
| PHB110NQ08T | Power Field-Effect Transistor | Nexperia | IRFU3607PBF vs PHB110NQ08T |
| BUK7609-75A,118 | N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin | Nexperia | IRFU3607PBF vs BUK7609-75A,118 |
| IRFS3607TRLPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFU3607PBF vs IRFS3607TRLPBF |
| AUIRFS3607 | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFU3607PBF vs AUIRFS3607 |