Part Details for IRFU9220 by Harris Semiconductor
Overview of IRFU9220 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFU9220
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 3.6A, 200V, 1.500 OHM, P-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 65 |
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$0.4254 / $0.5005 | Buy Now |
Part Details for IRFU9220
IRFU9220 CAD Models
IRFU9220 Part Data Attributes:
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IRFU9220
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFU9220
Harris Semiconductor
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 42 W | |
Power Dissipation-Max (Abs) | 42 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 50 ns | |
Turn-on Time-Max (ton) | 50 ns |
Alternate Parts for IRFU9220
This table gives cross-reference parts and alternative options found for IRFU9220. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU9220, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFU9220 | 3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | IRFU9220 vs IRFU9220 |
IRFU9220PBF | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Vishay Intertechnologies | IRFU9220 vs IRFU9220PBF |
IRFU9220PBF | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 | International Rectifier | IRFU9220 vs IRFU9220PBF |
IRFU9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Samsung Semiconductor | IRFU9220 vs IRFU9220 |
SIHFU9220-GE3 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Vishay Intertechnologies | IRFU9220 vs SIHFU9220-GE3 |
IRFU9220 | 3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | IRFU9220 vs IRFU9220 |
IRFU9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | Vishay Intertechnologies | IRFU9220 vs IRFU9220 |