Part Details for IRFZ44VZPBF by Infineon Technologies AG
Overview of IRFZ44VZPBF by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFZ44VZPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
39AH8941
|
Newark | Mosfet, N-Ch, 60V, 57A, 175Deg C, 92W, Transistor Polarity:N Channel, Continuous Drain Current Id:57A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.012Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFZ44VZPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1952 |
|
$0.9020 / $2.1500 | Buy Now |
|
DISTI #
IRFZ44VZPBF-ND
|
DigiKey | MOSFET N-CH 60V 57A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
282 In Stock |
|
$1.3674 / $2.0700 | Buy Now |
|
DISTI #
IRFZ44VZPBF
|
Avnet Americas | Trans MOSFET N-CH 60V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ44VZPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 2000 |
|
$0.8100 / $0.9836 | Buy Now |
|
DISTI #
39AH8941
|
Avnet Americas | Trans MOSFET N-CH 60V 57A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 39AH8941) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 951 Partner Stock |
|
$0.8960 / $1.9100 | Buy Now |
|
DISTI #
942-IRFZ44VZPBF
|
Mouser Electronics | MOSFET MOSFT 60V 57A 12mOhm 43nC RoHS: Compliant | 553 |
|
$0.9740 / $2.0200 | Buy Now |
|
|
Future Electronics | Single N-Channel 60 V 12 mOhm 43 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.9550 / $1.2000 | Buy Now |
|
|
Future Electronics | Single N-Channel 60 V 12 mOhm 43 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.9550 / $1.1400 | Buy Now |
|
DISTI #
66347288
|
Verical | Trans MOSFET N-CH Si 60V 57A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2224 | Americas - 20000 |
|
$0.9316 | Buy Now |
|
DISTI #
75723339
|
Verical | Trans MOSFET N-CH Si 60V 57A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 27 Package Multiple: 1 Date Code: 2306 | Americas - 1000 |
|
$0.7938 / $1.1913 | Buy Now |
|
DISTI #
73150189
|
Verical | Trans MOSFET N-CH Si 60V 57A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 11 Package Multiple: 1 Date Code: 2306 | Americas - 780 |
|
$0.7928 / $1.1652 | Buy Now |
Part Details for IRFZ44VZPBF
IRFZ44VZPBF CAD Models
IRFZ44VZPBF Part Data Attributes:
|
|
IRFZ44VZPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFZ44VZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 73 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 57 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 92 W | |
| Pulsed Drain Current-Max (IDM) | 230 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |