Datasheets
IRLU2905ZPBF by:

Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

Part Details for IRLU2905ZPBF by International Rectifier

Overview of IRLU2905ZPBF by International Rectifier

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Price & Stock for IRLU2905ZPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   4702
RFQ

Part Details for IRLU2905ZPBF

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IRLU2905ZPBF Part Data Attributes:

IRLU2905ZPBF International Rectifier
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Compare Parts:
IRLU2905ZPBF International Rectifier Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-251AA
Package Description LEAD FREE, PLASTIC, IPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLU2905ZPBF

This table gives cross-reference parts and alternative options found for IRLU2905ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLU2905ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLU2905Z Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 Infineon Technologies AG IRLU2905ZPBF vs IRLU2905Z
IRLU2905ZPBF Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG IRLU2905ZPBF vs IRLU2905ZPBF
Part Number Description Manufacturer Compare
IRFU2905Z Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 International Rectifier IRLU2905ZPBF vs IRFU2905Z
IRLU2905 Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 International Rectifier IRLU2905ZPBF vs IRLU2905
AP60T06GJ-HF TRANSISTOR 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp IRLU2905ZPBF vs AP60T06GJ-HF
AUIRLU2905 Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, IPAK-3 Infineon Technologies AG IRLU2905ZPBF vs AUIRLU2905
NTD5865NT4G Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL onsemi IRLU2905ZPBF vs NTD5865NT4G
NTD5865NL-1G Single N-Channel Logic Level Power MOSFET 60V, 46A, 16mΩ, DPAK INSERTION MOUNT, 75-TUBE onsemi IRLU2905ZPBF vs NTD5865NL-1G
IRLU2905ZPBF Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG IRLU2905ZPBF vs IRLU2905ZPBF
IRLU2905PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 Infineon Technologies AG IRLU2905ZPBF vs IRLU2905PBF
IRLU2905PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 International Rectifier IRLU2905ZPBF vs IRLU2905PBF
NTD5865N-1G Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE onsemi IRLU2905ZPBF vs NTD5865N-1G

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