Datasheets
ISC011N06LM5 by: Infineon Technologies AG

Power Field-Effect Transistor, 288A I(D), 60V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8

Part Details for ISC011N06LM5 by Infineon Technologies AG

Overview of ISC011N06LM5 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ISC011N06LM5

Part # Distributor Description Stock Price Buy
DISTI # TMOS6478
Rutronik N-CH 60V 288A 0,85mOhm SSO-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel Stock DE - 5000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 5,000 $1.5700
$1.5700 Buy Now

Part Details for ISC011N06LM5

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ISC011N06LM5 Part Data Attributes

ISC011N06LM5 Infineon Technologies AG
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ISC011N06LM5 Infineon Technologies AG Power Field-Effect Transistor, 288A I(D), 60V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Reach Compliance Code not_compliant
Avalanche Energy Rating (Eas) 570 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 288 A
Drain-source On Resistance-Max 1.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 90 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 188 W
Pulsed Drain Current-Max (IDM) 1152 A
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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