Part Details for IXFH12N100P by IXYS Corporation
Overview of IXFH12N100P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for IXFH12N100P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71AH4541
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Newark | Mosfet, N-Ch, 1Kv, 12A, To-247 Rohs Compliant: Yes |Ixys Semiconductor IXFH12N100P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.4400 / $9.5700 | Buy Now |
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DISTI #
747-IXFH12N100P
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Mouser Electronics | MOSFET 12 Amps 1000V RoHS: Compliant | 0 |
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$7.3500 / $9.2100 | Order Now |
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Future Electronics | N-Channel 1 kV 1.05 Ω 80 nC PolarTM HiPerFET Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$5.0100 / $5.1400 | Buy Now |
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DISTI #
IXFH12N100P
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TTI | MOSFET 12 Amps 1000V Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$5.0300 / $5.3400 | Buy Now |
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DISTI #
IXFH12N100P
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TME | Transistor: N-MOSFET, Polar™, unipolar, 1kV, 12A, 463W, TO247-3 Min Qty: 1 | 0 |
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$6.5900 / $9.2200 | RFQ |
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Perfect Parts Corporation | 371 |
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RFQ |
Part Details for IXFH12N100P
IXFH12N100P CAD Models
IXFH12N100P Part Data Attributes:
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IXFH12N100P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH12N100P
IXYS Corporation
Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 750 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 463 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH12N100P
This table gives cross-reference parts and alternative options found for IXFH12N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH12N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | IXFH12N100P vs 934057024118 |
| STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | IXFH12N100P vs STD3NA50T4 |
| IXFH68N20 | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | IXFH12N100P vs IXFH68N20 |
| IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFH12N100P vs IRF620B |
| SPA16N50C3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | IXFH12N100P vs SPA16N50C3 |
| STD7NK30Z | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | IXFH12N100P vs STD7NK30Z |
| IXFH32N50Q | Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXFH12N100P vs IXFH32N50Q |
| IPD06N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IXFH12N100P vs IPD06N03LBG |
| NP90N055VUG-E1-AY | Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape | Renesas Electronics Corporation | IXFH12N100P vs NP90N055VUG-E1-AY |
| BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IXFH12N100P vs BUK9614-30 |