Part Details for IXFH140N10P by IXYS Corporation
Overview of IXFH140N10P by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH140N10P
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
IXFH140N10P-ND
|
DigiKey | MOSFET N-CH 100V 140A TO247AD Min Qty: 1 Lead time: 44 Weeks Container: Tube |
13 In Stock |
|
$5.4611 / $9.6300 | Buy Now |
DISTI #
747-IXFH140N10P
|
Mouser Electronics | MOSFET 140 Amps 100V 0.011 Rds RoHS: Compliant | 2595 |
|
$4.8800 / $7.6200 | Buy Now |
|
Future Electronics | Single N-Channel 100 Vds 11 mOhm 600 W Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 30Tube |
|
$3.6100 / $3.9400 | Buy Now |
DISTI #
IXFH140N10P
|
TTI | MOSFET 140 Amps 100V 0.011 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$5.0100 / $5.1100 | Buy Now |
DISTI #
IXFH140N10P
|
TME | Transistor: N-MOSFET, Polar™, unipolar, 100V, 140A, 600W, TO247-3 Min Qty: 1 | 33 |
|
$6.2400 / $8.7300 | Buy Now |
|
New Advantage Corporation | MOSFET DIS.140A 100V N-CH TO247 HIPERFET THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 282 |
|
$11.7700 / $12.6100 | Buy Now |
Part Details for IXFH140N10P
IXFH140N10P CAD Models
IXFH140N10P Part Data Attributes
|
IXFH140N10P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXFH140N10P
IXYS Corporation
Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247AD | |
Package Description | TO-247AD, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 140 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFH140N10P
This table gives cross-reference parts and alternative options found for IXFH140N10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH140N10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTT140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH140N10P vs IXTT140N10P |
IXFT140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH140N10P vs IXFT140N10P |
IXTQ140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFH140N10P vs IXTQ140N10P |
IXFT140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH140N10P vs IXFT140N10P |
IXTQ140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFH140N10P vs IXTQ140N10P |
IXFH140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFH140N10P vs IXFH140N10P |
IXTT140N10P | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH140N10P vs IXTT140N10P |