Part Details for IXFH14N100Q2 by IXYS Corporation
Overview of IXFH14N100Q2 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH14N100Q2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K3167
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Newark | Mosfet, N, To-247, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:500W, Msl:-Rohs Compliant: Yes |Ixys Semiconductor IXFH14N100Q2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
IXFH14N100Q2-ND
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DigiKey | MOSFET N-CH 1000V 14A TO247AD Min Qty: 30 Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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$13.5987 | Buy Now |
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DISTI #
747-IXFH14N100Q2
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Mouser Electronics | MOSFET 14 Amps 1000V 0.90 Rds RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
7347847
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element14 Asia-Pacific | MOSFET, N, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$8.7847 / $9.2103 | Buy Now |
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DISTI #
7347847
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Farnell | MOSFET, N, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 0 |
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$8.7915 / $9.2161 | Buy Now |
Part Details for IXFH14N100Q2
IXFH14N100Q2 CAD Models
IXFH14N100Q2 Part Data Attributes
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IXFH14N100Q2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH14N100Q2
IXYS Corporation
Power Field-Effect Transistor, 14A I(D), 1000V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH14N100Q2
This table gives cross-reference parts and alternative options found for IXFH14N100Q2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH14N100Q2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT14F100B | Power Field-Effect Transistor, 14A I(D), 1000V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH14N100Q2 vs APT14F100B |
| APT14M100B | Power Field-Effect Transistor, 14A I(D), 1000V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH14N100Q2 vs APT14M100B |
| APT14F100B | Power Field-Effect Transistor, 14A I(D), 1000V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | IXFH14N100Q2 vs APT14F100B |