Part Details for IXFH14N60P by IXYS Corporation
Overview of IXFH14N60P by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH14N60P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFH14N60P-ND
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DigiKey | MOSFET N-CH 600V 14A TO247AD Min Qty: 1 Lead time: 46 Weeks Container: Tube |
24 In Stock |
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$2.8518 / $5.8600 | Buy Now |
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DISTI #
747-IXFH14N60P
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Mouser Electronics | MOSFET 600V 14A RoHS: Compliant | 17 |
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$2.9400 / $5.8600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$3.2100 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 156 |
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$2.9118 / $6.7200 | Buy Now |
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Quest Components | 124 |
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$3.9000 / $9.0000 | Buy Now | |
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DISTI #
IXFH14N60P
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TTI | MOSFET 600V 14A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$2.8500 / $3.8400 | Buy Now |
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DISTI #
IXFH14N60P
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TME | Transistor: N-MOSFET, unipolar, 600V, 14A, 300W, TO247-3 Min Qty: 1 | 0 |
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$3.1700 / $4.2900 | RFQ |
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DISTI #
1427290
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element14 Asia-Pacific | MOSFET, N, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$2.5246 / $4.0070 | Buy Now |
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DISTI #
1427290
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Farnell | MOSFET, N, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 14 Weeks, 0 Days Container: Each | 0 |
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$4.1835 / $4.4083 | Buy Now |
Part Details for IXFH14N60P
IXFH14N60P CAD Models
IXFH14N60P Part Data Attributes
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IXFH14N60P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH14N60P
IXYS Corporation
Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 900 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH14N60P
This table gives cross-reference parts and alternative options found for IXFH14N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH14N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH14N60P3 | Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXFH14N60P vs IXFH14N60P3 |
| FMC13N60ES | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | IXFH14N60P vs FMC13N60ES |
| IXFA14N60P | Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXFH14N60P vs IXFA14N60P |
| IXFP14N60P | Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXFH14N60P vs IXFP14N60P |
| IXFH14N60P | Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Littelfuse Inc | IXFH14N60P vs IXFH14N60P |
| FML13N60ES | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | IXFH14N60P vs FML13N60ES |
| IXFP14N60P3 | Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | IXFH14N60P vs IXFP14N60P3 |
| FMC13N60E | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | IXFH14N60P vs FMC13N60E |