Part Details for IXFN230N20T by IXYS Corporation
Overview of IXFN230N20T by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Motor control systems
Price & Stock for IXFN230N20T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFN230N20T
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Mouser Electronics | Discrete Semiconductor Modules 230A 200V RoHS: Compliant | 0 |
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$27.3700 / $36.1100 | Order Now |
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Future Electronics | Single N-Channel 200 Vds 7.5 mOhm 1090 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube | 0Tube |
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$25.8200 / $26.5700 | Buy Now |
DISTI #
IXFN230N20T
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TTI | Discrete Semiconductor Modules 230A 200V Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$25.3100 | Buy Now |
DISTI #
IXFN230N20T
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TME | Module, single transistor, 200V, 220A, SOT227B, screw, Idm: 630A Min Qty: 1 | 0 |
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$35.5400 / $44.7700 | RFQ |
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New Advantage Corporation | MOSFET MOD.220A 200V N-CH SOT227B GIGAMOS CHASSIS RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 1884 |
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$50.3700 / $53.9700 | Buy Now |
Part Details for IXFN230N20T
IXFN230N20T CAD Models
IXFN230N20T Part Data Attributes:
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IXFN230N20T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN230N20T
IXYS Corporation
Power Field-Effect Transistor, 220A I(D), 200V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | MINIBLOC-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 220 A | |
Drain-source On Resistance-Max | 0.0075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1090 W | |
Pulsed Drain Current-Max (IDM) | 630 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Nickel (Ni) | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |