Datasheets
IXFN230N20T by:

Power Field-Effect Transistor, 220A I(D), 200V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Part Details for IXFN230N20T by IXYS Corporation

Overview of IXFN230N20T by IXYS Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing Motor control systems

Price & Stock for IXFN230N20T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFN230N20T
Mouser Electronics Discrete Semiconductor Modules 230A 200V RoHS: Compliant 0
  • 1 $36.1100
  • 10 $32.6100
  • 20 $31.2300
  • 50 $30.8200
  • 100 $28.6200
  • 200 $27.3700
$27.3700 / $36.1100 Order Now
Future Electronics Single N-Channel 200 Vds 7.5 mOhm 1090 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $26.5700
  • 30 $26.3100
  • 40 $26.2400
  • 100 $26.0300
  • 150 $25.8200
$25.8200 / $26.5700 Buy Now
DISTI # IXFN230N20T
TTI Discrete Semiconductor Modules 230A 200V Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $25.3100
$25.3100 Buy Now
DISTI # IXFN230N20T
TME Module, single transistor, 200V, 220A, SOT227B, screw, Idm: 630A Min Qty: 1 0
  • 1 $44.7700
  • 3 $40.2100
  • 10 $35.5400
$35.5400 / $44.7700 RFQ
New Advantage Corporation MOSFET MOD.220A 200V N-CH SOT227B GIGAMOS CHASSIS RoHS: Compliant Min Qty: 1 Package Multiple: 100 1884
  • 100 $53.9700
  • 1,884 $50.3700
$50.3700 / $53.9700 Buy Now

Part Details for IXFN230N20T

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IXFN230N20T Part Data Attributes:

IXFN230N20T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFN230N20T IXYS Corporation Power Field-Effect Transistor, 220A I(D), 200V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 220 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1090 W
Pulsed Drain Current-Max (IDM) 630 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Nickel (Ni)
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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