Part Details for IXFR140N20P by IXYS Corporation
Overview of IXFR140N20P by IXYS Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFR140N20P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24M3014
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Newark | Mosfet, N, Isoplus247, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:90A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:300W Rohs Compliant: Yes |Ixys Semiconductor IXFR140N20P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 5 |
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$14.4700 / $18.9800 | Buy Now |
DISTI #
747-IXFR140N20P
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Mouser Electronics | MOSFET 75 Amps 200V 0.018 Rds RoHS: Compliant | 0 |
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$12.6100 / $18.2500 | Order Now |
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Future Electronics | IXFR Series Single N-Channel 200 V 22 mOhm 200 W Power Mosfet - ISOPLUS247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$10.8300 / $11.0800 | Buy Now |
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Future Electronics | IXFR Series Single N-Channel 200 V 22 mOhm 200 W Power Mosfet - ISOPLUS247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$10.8300 / $11.0800 | Buy Now |
DISTI #
IXFR140N20P
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TTI | MOSFET 75 Amps 200V 0.018 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$10.7600 / $10.9700 | Buy Now |
DISTI #
IXFR140N20P
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TME | Transistor: N-MOSFET, unipolar, 200V, 90A, 300W, ISOPLUS247™ Min Qty: 1 | 0 |
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$13.6700 / $18.9900 | RFQ |
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New Advantage Corporation | MOSFET DIS.90A 200V N-CH ISOPLUS247 HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$25.6000 / $27.4200 | Buy Now |
Part Details for IXFR140N20P
IXFR140N20P CAD Models
IXFR140N20P Part Data Attributes:
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IXFR140N20P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFR140N20P
IXYS Corporation
Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | ISOPLUS247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 4000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFR140N20P
This table gives cross-reference parts and alternative options found for IXFR140N20P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR140N20P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT20M20JLL | Power Field-Effect Transistor, 104A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR140N20P vs APT20M20JLL |
APT20M22JVRU3 | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR140N20P vs APT20M22JVRU3 |
IXFR90N20 | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR140N20P vs IXFR90N20 |
APT20M20JFLL | Power Field-Effect Transistor, 104A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR140N20P vs APT20M20JFLL |
APT20M22JVFR | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFR140N20P vs APT20M22JVFR |
IXFR140N20P | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | Littelfuse Inc | IXFR140N20P vs IXFR140N20P |
APT20M22JVRU2 | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR140N20P vs APT20M22JVRU2 |