Datasheets
IXFR140N20P by:

Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

Part Details for IXFR140N20P by IXYS Corporation

Overview of IXFR140N20P by IXYS Corporation

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Applications Automotive

Price & Stock for IXFR140N20P

Part # Distributor Description Stock Price Buy
DISTI # 24M3014
Newark Mosfet, N, Isoplus247, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:90A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:300W Rohs Compliant: Yes |Ixys Semiconductor IXFR140N20P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 5
  • 1 $18.9800
  • 10 $17.7700
  • 25 $16.5700
  • 60 $15.3700
  • 120 $14.9100
  • 270 $14.4700
$14.4700 / $18.9800 Buy Now
DISTI # 747-IXFR140N20P
Mouser Electronics MOSFET 75 Amps 200V 0.018 Rds RoHS: Compliant 0
  • 1 $18.2500
  • 10 $12.6100
$12.6100 / $18.2500 Order Now
Future Electronics IXFR Series Single N-Channel 200 V 22 mOhm 200 W Power Mosfet - ISOPLUS247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $11.0800
  • 60 $11.0200
  • 120 $10.9600
  • 150 $10.9400
  • 450 $10.8300
$10.8300 / $11.0800 Buy Now
Future Electronics IXFR Series Single N-Channel 200 V 22 mOhm 200 W Power Mosfet - ISOPLUS247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $11.0800
  • 60 $11.0200
  • 120 $10.9600
  • 150 $10.9400
  • 450 $10.8300
$10.8300 / $11.0800 Buy Now
DISTI # IXFR140N20P
TTI MOSFET 75 Amps 200V 0.018 Rds Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $10.9700
  • 450 $10.7600
$10.7600 / $10.9700 Buy Now
DISTI # IXFR140N20P
TME Transistor: N-MOSFET, unipolar, 200V, 90A, 300W, ISOPLUS247™ Min Qty: 1 0
  • 1 $18.9900
  • 3 $16.9300
  • 10 $15.0800
  • 30 $13.6700
$13.6700 / $18.9900 RFQ
New Advantage Corporation MOSFET DIS.90A 200V N-CH ISOPLUS247 HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 1 24
  • 13 $27.4200
  • 24 $25.6000
$25.6000 / $27.4200 Buy Now

Part Details for IXFR140N20P

IXFR140N20P CAD Models

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IXFR140N20P Part Data Attributes:

IXFR140N20P IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFR140N20P IXYS Corporation Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description ISOPLUS247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 4000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 280 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFR140N20P

This table gives cross-reference parts and alternative options found for IXFR140N20P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR140N20P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT20M20JLL Power Field-Effect Transistor, 104A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR140N20P vs APT20M20JLL
APT20M22JVRU3 Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR140N20P vs APT20M22JVRU3
IXFR90N20 Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN IXYS Corporation IXFR140N20P vs IXFR90N20
APT20M20JFLL Power Field-Effect Transistor, 104A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR140N20P vs APT20M20JFLL
APT20M22JVFR Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation IXFR140N20P vs APT20M22JVFR
IXFR140N20P Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN Littelfuse Inc IXFR140N20P vs IXFR140N20P
APT20M22JVRU2 Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR140N20P vs APT20M22JVRU2

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