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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AH1987
|
Newark | Discmsft Nch Std-Veryhivolt I4-Pak Iso+/ Tube |Littelfuse IXTF1N250 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$44.6700 | Buy Now |
DISTI #
IXTF1N250-ND
|
DigiKey | MOSFET N-CH 2500V 1A ISOPLUS I4 Min Qty: 1 Lead time: 35 Weeks Container: Tube | Temporarily Out of Stock |
|
$46.4899 / $56.8200 | Buy Now |
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IXTF1N250
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTF1N250
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 2500 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 40 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 23 pF | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |