Datasheets
IXTH110N10L2 by:

Power Field-Effect Transistor, 110A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

Part Details for IXTH110N10L2 by IXYS Corporation

Overview of IXTH110N10L2 by IXYS Corporation

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Price & Stock for IXTH110N10L2

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTH110N10L2
Mouser Electronics MOSFET L2 Linear Power MOSFET RoHS: Compliant 1656
  • 1 $19.4200
  • 10 $17.8800
  • 30 $15.7300
  • 60 $15.7200
  • 120 $14.8000
  • 270 $14.5300
  • 510 $13.6800
$13.6800 / $19.4200 Buy Now
Future Electronics N-Channel 100 V 18 mOhm Through Hole Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube 0
Tube
  • 30 $13.8900
  • 60 $13.8100
  • 90 $13.7700
  • 150 $13.7100
  • 300 $13.5900
$13.5900 / $13.8900 Buy Now
DISTI # IXTH110N10L2
TTI MOSFET L2 Linear Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $13.4400
  • 510 $13.1700
$13.1700 / $13.4400 Buy Now
DISTI # IXTH110N10L2
TME Transistor: N-MOSFET, unipolar, 100V, 110A, 600W, TO247-3, 230ns Min Qty: 1 0
  • 1 $18.6400
  • 25 $15.6100
  • 30 $15.4700
  • 120 $14.4100
  • 510 $13.3000
$13.3000 / $18.6400 RFQ
Chip1Cloud MOSFET N-CH 100V 110A TO-247 3636
RFQ
New Advantage Corporation MOSFET DIS.110A 100V N-CH TO-247AD LINEARL2 RoHS: Compliant Min Qty: 1 Package Multiple: 100 200
  • 100 $29.1400
  • 200 $27.2000
$27.2000 / $29.1400 Buy Now

Part Details for IXTH110N10L2

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IXTH110N10L2 Part Data Attributes

IXTH110N10L2 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTH110N10L2 IXYS Corporation Power Field-Effect Transistor, 110A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 600 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTH110N10L2

This table gives cross-reference parts and alternative options found for IXTH110N10L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH110N10L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTT110N10L2 Power Field-Effect Transistor, Littelfuse Inc IXTH110N10L2 vs IXTT110N10L2
IXTT110N10L2 Power Field-Effect Transistor, 110A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation IXTH110N10L2 vs IXTT110N10L2
CSD19534KCS 100-V, N channel NexFET™ power MOSFET, single TO-220, 16.5 mOhm 3-TO-220 -55 to 175 Texas Instruments IXTH110N10L2 vs CSD19534KCS

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