Datasheets
IXTH12N150 by:

Power Field-Effect Transistor, 12A I(D), 1500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

Part Details for IXTH12N150 by IXYS Corporation

Overview of IXTH12N150 by IXYS Corporation

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Price & Stock for IXTH12N150

Part # Distributor Description Stock Price Buy
DISTI # IXTH12N150-ND
DigiKey MOSFET N-CH 1500V 12A TO247 Min Qty: 1 Lead time: 57 Weeks Container: Tube Temporarily Out of Stock
  • 1 $16.3600
  • 30 $13.2427
  • 120 $12.4636
  • 510 $11.2951
$11.2951 / $16.3600 Buy Now
DISTI # 747-IXTH12N150
Mouser Electronics MOSFET >1200V High Voltage Power MOSFET RoHS: Compliant 0
  • 1 $16.3700
  • 10 $16.3600
$16.3600 / $16.3700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $11.3000
$11.3000 Buy Now
DISTI # IXTH12N150
TTI MOSFET >1200V High Voltage Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $12.8500
$12.8500 Buy Now
DISTI # IXTH12N150
TME Transistor: N-MOSFET, unipolar, 1.5kV, 12A, 890W, TO247-3, 1.2us Min Qty: 1 0
  • 1 $18.4700
  • 3 $16.7600
  • 10 $14.6100
  • 30 $13.2100
$13.2100 / $18.4700 RFQ

Part Details for IXTH12N150

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IXTH12N150 Part Data Attributes

IXTH12N150 IXYS Corporation
Buy Now Datasheet
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IXTH12N150 IXYS Corporation Power Field-Effect Transistor, 12A I(D), 1500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, TO-247, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 750 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1500 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 890 W
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTH12N150

This table gives cross-reference parts and alternative options found for IXTH12N150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH12N150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTT12N150HV Power Field-Effect Transistor, Littelfuse Inc IXTH12N150 vs IXTT12N150HV
IXTT12N140 Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation IXTH12N150 vs IXTT12N140
IXTH12N140 Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IXTH12N150 vs IXTH12N140
IXTT12N150HV Power Field-Effect Transistor, IXYS Corporation IXTH12N150 vs IXTT12N150HV
IXTT12N150 Power Field-Effect Transistor, Littelfuse Inc IXTH12N150 vs IXTT12N150
IXTT12N150 Power Field-Effect Transistor, 12A I(D), 1500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3/2 PIN IXYS Corporation IXTH12N150 vs IXTT12N150

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