Part Details for IXTH12N150 by IXYS Corporation
Overview of IXTH12N150 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTH12N150
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTH12N150-ND
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DigiKey | MOSFET N-CH 1500V 12A TO247 Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$11.2951 / $16.3600 | Buy Now |
DISTI #
747-IXTH12N150
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Mouser Electronics | MOSFET >1200V High Voltage Power MOSFET RoHS: Compliant | 0 |
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$16.3600 / $16.3700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$11.3000 | Buy Now |
DISTI #
IXTH12N150
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TTI | MOSFET >1200V High Voltage Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$12.8500 | Buy Now |
DISTI #
IXTH12N150
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TME | Transistor: N-MOSFET, unipolar, 1.5kV, 12A, 890W, TO247-3, 1.2us Min Qty: 1 | 0 |
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$13.2100 / $18.4700 | RFQ |
Part Details for IXTH12N150
IXTH12N150 CAD Models
IXTH12N150 Part Data Attributes
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IXTH12N150
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTH12N150
IXYS Corporation
Power Field-Effect Transistor, 12A I(D), 1500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC, TO-247, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 750 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 890 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTH12N150
This table gives cross-reference parts and alternative options found for IXTH12N150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH12N150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTT12N150HV | Power Field-Effect Transistor, | Littelfuse Inc | IXTH12N150 vs IXTT12N150HV |
IXTT12N140 | Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXTH12N150 vs IXTT12N140 |
IXTH12N140 | Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXTH12N150 vs IXTH12N140 |
IXTT12N150HV | Power Field-Effect Transistor, | IXYS Corporation | IXTH12N150 vs IXTT12N150HV |
IXTT12N150 | Power Field-Effect Transistor, | Littelfuse Inc | IXTH12N150 vs IXTT12N150 |
IXTT12N150 | Power Field-Effect Transistor, 12A I(D), 1500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3/2 PIN | IXYS Corporation | IXTH12N150 vs IXTT12N150 |