Datasheets
IXTH21N50 by:

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

Part Details for IXTH21N50 by IXYS Corporation

Overview of IXTH21N50 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTH21N50

Part # Distributor Description Stock Price Buy
Bristol Electronics   1
RFQ
Quest Components 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 1
  • 1 $8.8800
$8.8800 Buy Now
Chip1Cloud MegaMOSFET 8600
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 3
  • 1 $6.9200
  • 100 $5.1900
  • 1,000 $4.5000
$4.5000 / $6.9200 Buy Now

Part Details for IXTH21N50

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IXTH21N50 Part Data Attributes:

IXTH21N50 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTH21N50 IXYS Corporation Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Part Package Code TO-247AD
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTH21N50

This table gives cross-reference parts and alternative options found for IXTH21N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH21N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTH21N50 Power Field-Effect Transistor New Jersey Semiconductor Products Inc IXTH21N50 vs IXTH21N50
FQH18N50V2 Power Field-Effect Transistor, 20A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Fairchild Semiconductor Corporation IXTH21N50 vs FQH18N50V2
IXFH21N50Q Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IXYS Corporation IXTH21N50 vs IXFH21N50Q
APT5024BLLG Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTH21N50 vs APT5024BLLG
APT5024BLL Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation IXTH21N50 vs APT5024BLL
APT5024BLLG Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation IXTH21N50 vs APT5024BLLG
APT5024BFLLG Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTH21N50 vs APT5024BFLLG
Part Number Description Manufacturer Compare
APT5024BFLLG Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTH21N50 vs APT5024BFLLG
PJZ22NA50A_T0_10001 Power Field-Effect Transistor, PanJit Semiconductor IXTH21N50 vs PJZ22NA50A_T0_10001
FQH18N50V2 Power Field-Effect Transistor, 20A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Fairchild Semiconductor Corporation IXTH21N50 vs FQH18N50V2
SIHG460B-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IXTH21N50 vs SIHG460B-GE3
IRFP460BPBF Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, Vishay Intertechnologies IXTH21N50 vs IRFP460BPBF
STF20NM50FD 20A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN STMicroelectronics IXTH21N50 vs STF20NM50FD
IXFT21N50Q Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN IXYS Corporation IXTH21N50 vs IXFT21N50Q
FDA20N50-F109 Power MOSFET, N-Channel, UniFETTM, 500 V, 22 A, 230 mΩ, TO-3P, TO-3PN 3L, 450-TUBE onsemi IXTH21N50 vs FDA20N50-F109
STW20NM50 20A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics IXTH21N50 vs STW20NM50
APT5024BLLG Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTH21N50 vs APT5024BLLG

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