Part Details for IXTH3N150 by IXYS Corporation
Overview of IXTH3N150 by IXYS Corporation
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXTH3N150
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTH3N150-ND
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DigiKey | MOSFET N-CH 1500V 3A TO247 Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$8.1601 / $12.8800 | Buy Now |
DISTI #
747-IXTH3N150
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Mouser Electronics | MOSFET High Voltage Power MOSFET RoHS: Compliant | 0 |
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$12.8800 / $12.8900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$8.9000 | Buy Now |
DISTI #
IXTH3N150
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TTI | MOSFET High Voltage Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$8.1600 / $9.6600 | Buy Now |
DISTI #
IXTH3N150
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TME | Transistor: N-MOSFET, unipolar, 1.5kV, 3A, 250W, TO247-3, 900ns Min Qty: 1 | 0 |
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$9.4600 / $13.3200 | RFQ |
Part Details for IXTH3N150
IXTH3N150 CAD Models
IXTH3N150 Part Data Attributes
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IXTH3N150
IXYS Corporation
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Datasheet
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IXTH3N150
IXYS Corporation
Power Field-Effect Transistor, 3A I(D), 1500V, 7.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247AD | |
Package Description | PLASTIC, TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1500 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 7.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 9 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |