Part Details for IXTH6N150 by IXYS Corporation
Overview of IXTH6N150 by IXYS Corporation
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- Number of Functional Equivalents:
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Motor control systems
Price & Stock for IXTH6N150
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXTH6N150-ND
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DigiKey | MOSFET N-CH 1500V 6A TO247 Min Qty: 1 Lead time: 57 Weeks Container: Tube |
234 In Stock |
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$7.2603 / $11.4600 | Buy Now |
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DISTI #
747-IXTH6N150
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Mouser Electronics | MOSFET HIGH VOLT PWR MOSFET 1500V 6A RoHS: Compliant | 290 |
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$7.2500 / $11.4500 | Buy Now |
|
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Future Electronics | N-Channel 1500 V 3.5 Ohm 540 W Through Hole Power Mosfet - TO-247(IXTH) RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$6.8000 / $6.9700 | Buy Now |
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DISTI #
IXTH6N150
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TTI | MOSFET HIGH VOLT PWR MOSFET 1500V 6A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$6.9700 / $7.1100 | Buy Now |
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DISTI #
IXTH6N150
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TME | Transistor: N-MOSFET, unipolar, 1.5kV, 6A, 540W, TO247-3, 1.5us Min Qty: 1 | 0 |
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$8.4100 / $11.8100 | RFQ |
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New Advantage Corporation | MOSFET DIS.6A 1500V N-CH TO247-3 H.VOLTAGE THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 478 |
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$15.8800 / $17.0100 | Buy Now |
Part Details for IXTH6N150
IXTH6N150 CAD Models
IXTH6N150 Part Data Attributes
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IXTH6N150
IXYS Corporation
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Datasheet
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IXTH6N150
IXYS Corporation
Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |