Part Details for IXTJ6N150 by Littelfuse Inc
Overview of IXTJ6N150 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXTJ6N150
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1549
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Newark | Discmosfet N-Ch Std-Hivoltage Isoplus247/ Tube |Littelfuse IXTJ6N150 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.9800 / $9.6600 | Buy Now |
|
DISTI #
IXTJ6N150-ND
|
DigiKey | MOSFET N-CH 1500V 3A TO247 Min Qty: 300 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
|
$10.7221 | Buy Now |
Part Details for IXTJ6N150
IXTJ6N150 CAD Models
IXTJ6N150 Part Data Attributes
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IXTJ6N150
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTJ6N150
Littelfuse Inc
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 3.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 64 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |