Part Details for IXTN600N04T2 by Littelfuse Inc
Overview of IXTN600N04T2 by Littelfuse Inc
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- Number of Functional Equivalents:
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXTN600N04T2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1600
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Newark | Mosfet, N-Ch, 40V, 600A, Sot-227, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:600A, Transistor Mounting:Module, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V, No. Of Pins:4Pinsrohs Compliant: Yes |Littelfuse IXTN600N04T2 Min Qty: 300 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$28.8100 | Buy Now |
|
DISTI #
3771793
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element14 Asia-Pacific | MOSFET, N-CH, 40V, 600A, SOT-227 RoHS: Compliant Min Qty: 1 Container: Each | 12 |
|
$28.3216 / $37.4462 | Buy Now |
|
DISTI #
3771793
|
Farnell | MOSFET, N-CH, 40V, 600A, SOT-227 RoHS: Compliant Min Qty: 1 Lead time: 26 Weeks, 0 Days Container: Each | 0 |
|
$30.7328 / $39.5512 | Buy Now |
Part Details for IXTN600N04T2
IXTN600N04T2 CAD Models
IXTN600N04T2 Part Data Attributes
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IXTN600N04T2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTN600N04T2
Littelfuse Inc
Power Field-Effect Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 600 A | |
| Drain-source On Resistance-Max | 0.0013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1470 pF | |
| JESD-30 Code | R-PUFM-X4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 940 W | |
| Pulsed Drain Current-Max (IDM) | 1800 A | |
| Surface Mount | NO | |
| Terminal Finish | Nickel (Ni) | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |