Part Details for IXTP3N60P by IXYS Corporation
Overview of IXTP3N60P by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IXTP3N60P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58M7664
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Newark | Mosfet, N, To-220, Transistor Polarity:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:3A, On Resistance Rds(On):2.9Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5.5Vrohs Compliant: Yes |Ixys Semiconductor IXTP3N60P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Quest Components | 3 A, 600 V, 2.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 65 |
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$0.6224 / $1.0374 | Buy Now |
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ComSIT USA | POLARHV POWER MOSFET Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 400 |
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RFQ |
Part Details for IXTP3N60P
IXTP3N60P CAD Models
IXTP3N60P Part Data Attributes:
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IXTP3N60P
IXYS Corporation
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Datasheet
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Compare Parts:
IXTP3N60P
IXYS Corporation
Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 2.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP3N60P
This table gives cross-reference parts and alternative options found for IXTP3N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP3N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTY3N60P | Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN | IXYS Corporation | IXTP3N60P vs IXTY3N60P |
| IXTA3N60P | Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP3N60P vs IXTA3N60P |