Part Details for IXTQ170N10P by IXYS Corporation
Overview of IXTQ170N10P by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTQ170N10P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IXTQ170N10P-ND
|
DigiKey | MOSFET N-CH 100V 170A TO3P Min Qty: 1 Lead time: 44 Weeks Container: Tube | Temporarily Out of Stock |
|
$6.8010 / $11.9900 | Buy Now |
|
DISTI #
747-IXTQ170N10P
|
Mouser Electronics | MOSFET 170 Amps 100V 0.009 Ohm Rds RoHS: Compliant | 1831 |
|
$6.8100 / $12.0000 | Buy Now |
|
|
Future Electronics | MOSFET 170 Amps 100V 0.009 Ohm Rds RoHS: Non Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
|
$7.3100 | Buy Now |
|
DISTI #
IXTQ170N10P
|
TTI | MOSFET 170 Amps 100V 0.009 Ohm Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$6.3700 / $7.1200 | Buy Now |
|
DISTI #
IXTQ170N10P
|
TME | Transistor: N-MOSFET, Polar™, unipolar, 100V, 170A, 715W, TO3P Min Qty: 1 | 1 |
|
$7.7200 / $10.7900 | Buy Now |
|
DISTI #
1427383
|
element14 Asia-Pacific | MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$5.6216 / $9.1076 | Buy Now |
|
DISTI #
1427383
|
Farnell | MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Lead time: 14 Weeks, 0 Days Container: Each | 0 |
|
$3.9952 / $6.3549 | Buy Now |
|
|
New Advantage Corporation | MOSFET DIS.170A 100V N-CH TO3P POLAR THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 200 |
|
$13.3600 / $14.3200 | Buy Now |
Part Details for IXTQ170N10P
IXTQ170N10P CAD Models
IXTQ170N10P Part Data Attributes
|
|
IXTQ170N10P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTQ170N10P
IXYS Corporation
Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 170 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 715 W | |
| Pulsed Drain Current-Max (IDM) | 350 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | PURE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTQ170N10P
This table gives cross-reference parts and alternative options found for IXTQ170N10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ170N10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTQ170N10P | Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXTQ170N10P vs IXTQ170N10P |
| IXTT170N10P | Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTQ170N10P vs IXTT170N10P |
| IXFK170N10P | Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Littelfuse Inc | IXTQ170N10P vs IXFK170N10P |
| IXFK170N10P | Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXYS Corporation | IXTQ170N10P vs IXFK170N10P |
| IXTK170N10P | Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Littelfuse Inc | IXTQ170N10P vs IXTK170N10P |