Datasheets
IXTQ52N30P by:

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for IXTQ52N30P by IXYS Corporation

Overview of IXTQ52N30P by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTQ52N30P

Part # Distributor Description Stock Price Buy
DISTI # 71AH4592
Newark Mosfet, N-Ch, 300V, 52A, To-3P Rohs Compliant: Yes |Ixys Semiconductor IXTQ52N30P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $6.9900
  • 10 $5.9900
  • 25 $5.7200
  • 60 $5.4400
  • 120 $5.2200
  • 270 $4.9900
  • 510 $4.7000
$4.7000 / $6.9900 Buy Now
DISTI # IXTQ52N30P-ND
DigiKey MOSFET N-CH 300V 52A TO3P Min Qty: 1 Lead time: 40 Weeks Container: Tube Temporarily Out of Stock
  • 1 $6.7300
  • 30 $5.3713
  • 120 $4.8061
  • 510 $4.2406
  • 1,020 $3.8166
  • 2,010 $3.5763
$3.5763 / $6.7300 Buy Now
DISTI # 747-IXTQ52N30P
Mouser Electronics MOSFET 52 Amps 300V 0.066 Ohm Rds RoHS: Compliant 160
  • 1 $6.7200
  • 10 $5.7600
  • 30 $5.2300
  • 120 $4.8000
  • 270 $4.5200
  • 510 $4.2400
  • 1,020 $3.8100
$3.8100 / $6.7200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $4.1000
$4.1000 Buy Now
DISTI # IXTQ52N30P
TTI MOSFET 52 Amps 300V 0.066 Ohm Rds Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $4.4700
  • 510 $4.2000
  • 1,020 $3.7700
  • 2,010 $3.7000
$3.7000 / $4.4700 Buy Now
DISTI # IXTQ52N30P
TME Transistor: N-MOSFET, Polar™, unipolar, 300V, 52A, 400W, TO3P, 250ns Min Qty: 1 227
  • 1 $5.4500
  • 3 $4.8200
  • 10 $4.3300
  • 30 $4.0400
$4.0400 / $5.4500 Buy Now
Chips Pulse Industry Limited 300V 52A 66mohms@26A 10V 400W N Channel TO-3P MOSFETs ROHS Purchase Online, Ship Immediately 31
  • 1 $4.0513
  • 10 $3.9625
  • 30 $3.9038
  • 100 $3.8452
$3.8452 / $4.0513 Buy Now
DISTI # 3438434
element14 Asia-Pacific MOSFET, N-CH, 300V, 52A, TO-3P RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $6.9133
  • 5 $6.1500
  • 10 $5.3868
  • 50 $5.1666
  • 100 $4.9391
  • 250 $4.6529
$4.6529 / $6.9133 Buy Now
DISTI # 3438434
Farnell MOSFET, N-CH, 300V, 52A, TO-3P RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 0
  • 1 $6.5687
  • 5 $5.9193
  • 10 $5.2574
  • 50 $4.9827
  • 100 $4.6955
  • 250 $4.5956
$4.5956 / $6.5687 Buy Now
LCSC 300V 52A 66m26A10V 400W 5V250uA 1PCSNChannel TO-3P MOSFETs ROHS 26
  • 1 $4.5014
  • 10 $4.4028
  • 30 $4.3376
  • 100 $4.2724
$4.2724 / $4.5014 Buy Now
New Advantage Corporation MOSFET DIS.52A 300V N-CH TO3P POLAR THT RoHS: Compliant Min Qty: 1 Package Multiple: 1 43
  • 41 $8.8100
  • 43 $8.2200
$8.2200 / $8.8100 Buy Now

Part Details for IXTQ52N30P

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IXTQ52N30P Part Data Attributes

IXTQ52N30P IXYS Corporation
Buy Now Datasheet
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IXTQ52N30P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-3P
Package Description TO-3P, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTQ52N30P

This table gives cross-reference parts and alternative options found for IXTQ52N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ52N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT30M70BVRG Power Field-Effect Transistor, 48A I(D), 300V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTQ52N30P vs APT30M70BVRG
APT30M75BLLG Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc IXTQ52N30P vs APT30M75BLLG
APT30M61SFLLG Power Field-Effect Transistor, 54A I(D), 300V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXTQ52N30P vs APT30M61SFLLG
IXTP50N28T Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IXYS Corporation IXTQ52N30P vs IXTP50N28T
IXFV52N30P Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation IXTQ52N30P vs IXFV52N30P
IXFV52N30PS Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXYS Corporation IXTQ52N30P vs IXFV52N30PS
IXTA50N28T Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IXYS Corporation IXTQ52N30P vs IXTA50N28T
IXFH52N30P Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN IXYS Corporation IXTQ52N30P vs IXFH52N30P
APT30M70BVFRG Power Field-Effect Transistor, 48A I(D), 300V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IXTQ52N30P vs APT30M70BVFRG
IXFT52N30P Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IXTQ52N30P vs IXFT52N30P

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