Part Details for IXTX20N150 by IXYS Corporation
Overview of IXTX20N150 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTX20N150
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTX20N150-ND
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DigiKey | MOSFET N-CH 1500V 20A PLUS247-3 Min Qty: 1 Lead time: 57 Weeks Container: Tube |
90 In Stock |
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$23.0080 / $29.6000 | Buy Now |
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DISTI #
747-IXTX20N150
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Mouser Electronics | MOSFET 1500 V High Voltage Power MOSFET RoHS: Compliant | 225 |
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$21.5500 / $29.3500 | Buy Now |
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Future Electronics | IXTX Series 1500 V 20 A 1 Ohm High Voltage Power Mosfet - PLUS247™-3 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$19.3700 / $19.7500 | Buy Now |
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Bristol Electronics | 70 |
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RFQ | ||
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DISTI #
IXTX20N150
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TTI | MOSFET 1500 V High Voltage Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$20.0300 | Buy Now |
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DISTI #
IXTX20N150
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TME | Transistor: N-MOSFET, unipolar, 1.5kV, 20A, 1250W, PLUS247™, 1.1us Min Qty: 1 | 0 |
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$23.6300 / $33.0800 | RFQ |
Part Details for IXTX20N150
IXTX20N150 CAD Models
IXTX20N150 Part Data Attributes
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IXTX20N150
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTX20N150
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 1500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTX20N150
This table gives cross-reference parts and alternative options found for IXTX20N150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTX20N150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTK20N150 | Power Field-Effect Transistor, | Littelfuse Inc | IXTX20N150 vs IXTK20N150 |