Part Details for IXYN150N60B3 by IXYS Corporation
Overview of IXYN150N60B3 by IXYS Corporation
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IXYN150N60B3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXYN150N60B3-ND
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DigiKey | IGBT Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$30.8173 | Buy Now |
|
DISTI #
747-IXYN150N60B3
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Mouser Electronics | IGBT Transistors IGBT XPT-GENX3 (MINI | 0 |
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$30.8100 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube | 0Tube |
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$33.1100 | Buy Now |
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DISTI #
IXYN150N60B3
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TTI | IGBT Transistors IGBT XPT-GENX3 (MINI Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$30.9100 | Buy Now |
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DISTI #
IXYN150N60B3
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TME | Module: IGBT, single transistor, Urmax: 600V, Ic: 140A, SOT227B Min Qty: 1 | 0 |
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$39.4200 / $49.6200 | RFQ |
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New Advantage Corporation | IGBT MOD.SINGLE 140A 600V SOT-227B GENX3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 15 |
|
$60.5600 / $64.8800 | Buy Now |
Part Details for IXYN150N60B3
IXYN150N60B3 CAD Models
IXYN150N60B3 Part Data Attributes
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IXYN150N60B3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXYN150N60B3
IXYS Corporation
Insulated Gate Bipolar Transistor,
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 250 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 330 ns | |
| Turn-on Time-Nom (ton) | 110 ns | |
| VCEsat-Max | 2.2 V |