Datasheets
K4B4G1646E-BCNB by:

DDR3 DRAM, 256MX16, 0.255ns, CMOS, PBGA96, FBGA-96

Part Details for K4B4G1646E-BCNB by Samsung Semiconductor

Overview of K4B4G1646E-BCNB by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Price & Stock for K4B4G1646E-BCNB

Part # Distributor Description Stock Price Buy
Chip Stock   1344
RFQ

Part Details for K4B4G1646E-BCNB

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K4B4G1646E-BCNB Part Data Attributes:

K4B4G1646E-BCNB Samsung Semiconductor
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K4B4G1646E-BCNB Samsung Semiconductor DDR3 DRAM, 256MX16, 0.255ns, CMOS, PBGA96, FBGA-96
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description FBGA-96
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Samacsys Manufacturer SAMSUNG
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.255 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 1066 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96
Length 13.3 mm
Memory Density 4294967296 bit
Memory IC Type DDR3 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 256MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.000015 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 7.5 mm

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