Datasheets
K4S161622E-TC80 by: Samsung Semiconductor

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

Part Details for K4S161622E-TC80 by Samsung Semiconductor

Overview of K4S161622E-TC80 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for K4S161622E-TC80

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 284
  • 1 $5.0400
  • 6 $3.2760
  • 17 $2.5200
  • 51 $2.3522
  • 108 $2.1838
  • 219 $2.0664
$2.0664 / $5.0400 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 227
  • 1 $6.7500
  • 60 $3.1500
  • 160 $2.9250
$2.9250 / $6.7500 Buy Now

Part Details for K4S161622E-TC80

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K4S161622E-TC80 Part Data Attributes:

K4S161622E-TC80 Samsung Semiconductor
Buy Now Datasheet
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K4S161622E-TC80 Samsung Semiconductor Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 125 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Length 20.95 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 2048
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.13 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S161622E-TC80

This table gives cross-reference parts and alternative options found for K4S161622E-TC80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622E-TC80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S161622D-TC80 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622E-TC80 vs K4S161622D-TC80
KM416S1120DT-G8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622E-TC80 vs KM416S1120DT-G8
Part Number Description Manufacturer Compare
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc K4S161622E-TC80 vs IS42S16100B-6T
IS42VS16100D-10T Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc K4S161622E-TC80 vs IS42VS16100D-10T
AS4LC1M16S0-12TC Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Alliance Semiconductor Corporation K4S161622E-TC80 vs AS4LC1M16S0-12TC
MSM56V16160DH-15TS-K Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 LAPIS Semiconductor Co Ltd K4S161622E-TC80 vs MSM56V16160DH-15TS-K
HY57V161610DTC-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc K4S161622E-TC80 vs HY57V161610DTC-8
M12L16161A-5TIG Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Elite Semiconductor Memory Technology Inc K4S161622E-TC80 vs M12L16161A-5TIG
KM416S1120DT-F7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622E-TC80 vs KM416S1120DT-F7
K4S161622D-TC80 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622E-TC80 vs K4S161622D-TC80
VG3617161DT-6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation K4S161622E-TC80 vs VG3617161DT-6
HY57V161610ETP-5I Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 SK Hynix Inc K4S161622E-TC80 vs HY57V161610ETP-5I

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