Part Details for LBSS138LT1G by LRC Leshan Radio Co Ltd
Overview of LBSS138LT1G by LRC Leshan Radio Co Ltd
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for LBSS138LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
LBSS138LT1G
|
Avnet Asia | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R (Alt: LBSS138LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
|
RFQ | |
|
|
Win Source Electronics | Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3 | 1199068 |
|
$0.0100 / $0.0150 | Buy Now |
Part Details for LBSS138LT1G
LBSS138LT1G CAD Models
LBSS138LT1G Part Data Attributes
|
|
LBSS138LT1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
|
Compare Parts:
LBSS138LT1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for LBSS138LT1G
This table gives cross-reference parts and alternative options found for LBSS138LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS138LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS138D87Z | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | LBSS138LT1G vs BSS138D87Z |
| BSS138/L99Z | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | LBSS138LT1G vs BSS138/L99Z |
| BSS138TA | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Diodes Incorporated | LBSS138LT1G vs BSS138TA |
| BSS138LT3 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | onsemi | LBSS138LT1G vs BSS138LT3 |
| BSS138 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Diodes Incorporated | LBSS138LT1G vs BSS138 |
| BSS138-13 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | LBSS138LT1G vs BSS138-13 |
| BSS138E6433 | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | LBSS138LT1G vs BSS138E6433 |
| BSS138/D87Z | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | LBSS138LT1G vs BSS138/D87Z |
| BSS138/L99Z | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | LBSS138LT1G vs BSS138/L99Z |
| BSS138 | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | LBSS138LT1G vs BSS138 |