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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
60AC3729
|
Newark | Mosfet, N-Ch, 1.2Kv, 27A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:27A, Drain Source Voltage Vds:1.2Kv, On Resistance Rds(On):0.12Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Littelfuse LSIC1MO120E0120 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$11.4500 / $17.6300 | Buy Now |
DISTI #
F11004-ND
|
DigiKey | SICFET N-CH 1200V 27A TO247-3 Min Qty: 1 Lead time: 30 Weeks Container: Tube |
854 In Stock |
|
$11.5170 / $16.6800 | Buy Now |
|
Future Electronics | LSIC1MO120 Series 1200 V 120 mOhm N-Ch. Enhancement-Mode SiC MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 11 Package Multiple: 25 Container: Tube | 11Tube |
|
$10.5000 / $10.7600 | Buy Now |
DISTI #
LSIC1MO120E0120
|
TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 18A, Idm: 60A, 139W Min Qty: 1 | 0 |
|
$12.5100 / $16.2800 | RFQ |
DISTI #
2889732
|
element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$13.6174 / $19.5052 | Buy Now |
DISTI #
2889732
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Farnell | MOSFET, N-CH, 1.2KV, 27A, TO-247 RoHS: Compliant Min Qty: 450 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
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$10.7392 | Buy Now |
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New Advantage Corporation | MOSFET SIL.CARB.DIS.27A 1200V N-CH TO247 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 156 |
|
$29.9400 / $32.0800 | Buy Now |
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Ozdisan Elektronik | MOSFET SIL.CARB.DIS.27A 1200V N-CH TO247 | 156 |
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$22.4526 / $24.0243 | Buy Now |
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LSIC1MO120E0120
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
LSIC1MO120E0120
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | TO-247, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 27 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |