Datasheets
MC1413BDG by:

High Voltage, High Current Darlington Transistor Driver Array, SOIC 16 LEAD, 48-TUBE

Part Details for MC1413BDG by onsemi

Overview of MC1413BDG by onsemi

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Price & Stock for MC1413BDG

Part # Distributor Description Stock Price Buy
Bristol Electronics   88
RFQ
Bristol Electronics   Min Qty: 12 54
  • 12 $0.4500
  • 46 $0.2925
$0.2925 / $0.4500 Buy Now
Bristol Electronics   100
RFQ
Quest Components 0.5 A, 50 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR 3
  • 1 $0.6345
$0.6345 Buy Now
Quest Components 0.5 A, 50 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR 43
  • 1 $0.6000
  • 9 $0.4800
  • 43 $0.3000
$0.3000 / $0.6000 Buy Now
ComSIT USA HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAY Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin RoHS: Compliant Europe - 1528
RFQ
Chip 1 Exchange INSTOCK 872
RFQ
Chip 1 Exchange INSTOCK 3300
RFQ
Chip1Cloud TRANS 7NPN DARL 50V 0.5A 16SO 16400
RFQ

Part Details for MC1413BDG

MC1413BDG CAD Models

MC1413BDG Part Data Attributes:

MC1413BDG onsemi
Buy Now Datasheet
Compare Parts:
MC1413BDG onsemi High Voltage, High Current Darlington Transistor Driver Array, SOIC 16 LEAD, 48-TUBE
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOIC 16 LEAD
Package Description SOIC-16
Pin Count 16
Manufacturer Package Code 751B-05
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.39.00.01
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 50 V
Configuration COMPLEX
DC Current Gain-Min (hFE) 1000
JESD-30 Code R-PDSO-G16
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 7
Number of Terminals 16
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MC1413BDG

This table gives cross-reference parts and alternative options found for MC1413BDG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC1413BDG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MC1413BD 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, CASE 751B-05, SOIC-16 Rochester Electronics LLC MC1413BDG vs MC1413BD
MC1413DG High Voltage, High Current Darlington Transistor Driver Array, SOIC 16 LEAD, 48-TUBE onsemi MC1413BDG vs MC1413DG
MC1413D 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, SOIC-16 Motorola Mobility LLC MC1413BDG vs MC1413D
MC1413DR2G 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, LEAD FREE, CASE 751B-05, SOIC-16 Rochester Electronics LLC MC1413BDG vs MC1413DR2G
MC1413DR2 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, SOIC-16 Motorola Mobility LLC MC1413BDG vs MC1413DR2
ULQ2004L Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin, PLASTIC, SOIC-16 Sanken Electric Co Ltd MC1413BDG vs ULQ2004L
MC1416BDR2 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 751B, SOIC-16 Motorola Mobility LLC MC1413BDG vs MC1416BDR2
MC1413D 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, CASE 751B-05, SOIC-16 Rochester Electronics LLC MC1413BDG vs MC1413D
ULN2003L Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin, PLASTIC, SOIC-16 Sanken Electric Co Ltd MC1413BDG vs ULN2003L
MC1413BDR2 High Voltage, High Current Darlington Transistor Driver Array, SOIC 16 LEAD, 2500-REEL onsemi MC1413BDG vs MC1413BDR2
Part Number Description Manufacturer Compare
MC1413BD High Voltage, High Current Darlington Transistor Driver Array, SOIC 16 LEAD, 48-TUBE onsemi MC1413BDG vs MC1413BD
ULN2004A Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin, PLASTIC, DIP-16 Sanken Electric Co Ltd MC1413BDG vs ULN2004A
MC1413DR2G High Voltage, High Current Darlington Transistor Driver Array, SOIC 16 LEAD, 2500-REEL onsemi MC1413BDG vs MC1413DR2G
MC1416BDR2 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 751B, SOIC-16 onsemi MC1413BDG vs MC1416BDR2
MC1416BP 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, DIP-16 onsemi MC1413BDG vs MC1416BP
DS2004CN TRANSISTOR 0.5 A, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, N16E, DIP-16, BIP General Purpose Power National Semiconductor Corporation MC1413BDG vs DS2004CN
ULQ2004A Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin, PLASTIC, DIP-16 Sanken Electric Co Ltd MC1413BDG vs ULQ2004A
DS9666CN TRANSISTOR 0.5 A, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, N16E, DIP-16, BIP General Purpose Power National Semiconductor Corporation MC1413BDG vs DS9666CN
TD62003AP TRANSISTOR 0.5 A, 50 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, 0.300 INCH, PLASTIC, DIP-16, BIP General Purpose Power Toshiba America Electronic Components MC1413BDG vs TD62003AP
DS2004MJ 0.5A, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, CERAMIC, J16A, DIP-16 Texas Instruments MC1413BDG vs DS2004MJ

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