Datasheets
MCH3383-TL-H by:

Single P-Channel Power MOSFET, -12V, -3.5A, 69mΩ, SC 70FL / MCPH3, 3000-REEL

Part Details for MCH3383-TL-H by onsemi

Overview of MCH3383-TL-H by onsemi

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for MCH3383-TL-H

Part # Distributor Description Stock Price Buy
DISTI # 73AK2810
Newark Mch3383-Tl-H, Single Mosfets |Onsemi MCH3383-TL-H Min Qty: 1890 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.3170
  • 5,000 $0.2880
$0.2880 / $0.3170 Buy Now
Rochester Electronics P-Channel Silicon MOSFET For Low Voltage Drive Switching Device Applications RoHS: Compliant Status: Obsolete Min Qty: 1 75417
  • 1 $0.1934
  • 25 $0.1895
  • 100 $0.1818
  • 500 $0.1741
  • 1,000 $0.1644
$0.1644 / $0.1934 Buy Now
DISTI # MCH3383-TL-H
Avnet Asia Trans MOSFET P-CH 12V 3.5A 3-Pin MCPH T/R (Alt: MCH3383-TL-H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 0
RFQ

Part Details for MCH3383-TL-H

MCH3383-TL-H CAD Models

MCH3383-TL-H Part Data Attributes:

MCH3383-TL-H onsemi
Buy Now Datasheet
Compare Parts:
MCH3383-TL-H onsemi Single P-Channel Power MOSFET, -12V, -3.5A, 69mΩ, SC 70FL / MCPH3, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code SC 70FL / MCPH3
Package Description SC-70FL, 3 PIN
Pin Count 3
Manufacturer Package Code 419AQ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.069 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F3
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Surface Mount YES
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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