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Single P-Channel Power MOSFET, -12V, -3.5A, 69mΩ, SC 70FL / MCPH3, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AK2810
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Newark | Mch3383-Tl-H, Single Mosfets |Onsemi MCH3383-TL-H Min Qty: 1890 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.2880 / $0.3170 | Buy Now |
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Rochester Electronics | P-Channel Silicon MOSFET For Low Voltage Drive Switching Device Applications RoHS: Compliant Status: Obsolete Min Qty: 1 | 75417 |
|
$0.1644 / $0.1934 | Buy Now |
DISTI #
MCH3383-TL-H
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Avnet Asia | Trans MOSFET P-CH 12V 3.5A 3-Pin MCPH T/R (Alt: MCH3383-TL-H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
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MCH3383-TL-H
onsemi
Buy Now
Datasheet
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MCH3383-TL-H
onsemi
Single P-Channel Power MOSFET, -12V, -3.5A, 69mΩ, SC 70FL / MCPH3, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SC 70FL / MCPH3 | |
Package Description | SC-70FL, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 419AQ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.069 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F3 | |
JESD-609 Code | e6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Finish | Tin/Bismuth (Sn/Bi) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |