Datasheets
MDD2N60RH by:

Power Field-Effect Transistor,

Part Details for MDD2N60RH by MagnaChip Semiconductor Ltd

Overview of MDD2N60RH by MagnaChip Semiconductor Ltd

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Price & Stock for MDD2N60RH

Part # Distributor Description Stock Price Buy
ComSIT USA 600V, 1.9A, 4.5 Ohm N-Channel MOSFET Power Field-Effect Transistor, 1.9A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant Europe - 2148
RFQ
Chip1Cloud   2570
RFQ

Part Details for MDD2N60RH

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MDD2N60RH Part Data Attributes:

MDD2N60RH MagnaChip Semiconductor Ltd
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MDD2N60RH MagnaChip Semiconductor Ltd Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MAGNACHIP SEMICONDUCTOR LTD
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 115 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 4.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 7.6 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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