Part Details for MII200-12A4 by IXYS Corporation
Overview of MII200-12A4 by IXYS Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for MII200-12A4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MII200-12A4
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 180A Min Qty: 1 | 0 |
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$183.6600 / $227.7000 | RFQ |
Part Details for MII200-12A4
MII200-12A4 CAD Models
MII200-12A4 Part Data Attributes
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MII200-12A4
IXYS Corporation
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Datasheet
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MII200-12A4
IXYS Corporation
Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | MODULE | |
| Package Description | MODULE-7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 270 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 700 ns | |
| Turn-on Time-Nom (ton) | 150 ns | |
| VCEsat-Max | 3 V |