Part Details for MIXA100W1200TEH by IXYS Corporation
Overview of MIXA100W1200TEH by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MIXA100W1200TEH
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
MIXA100W1200TEH-ND
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DigiKey | IGBT MODULE 1200V 155A 500W E3 Min Qty: 5 Lead time: 68 Weeks Container: Box | Temporarily Out of Stock |
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$135.3810 / $146.2520 | Buy Now |
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DISTI #
747-MIXA100W1200TEH
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Mouser Electronics | IGBT Modules Six Pack SPT IGBT RoHS: Compliant | 5 |
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$135.3800 / $151.6900 | Buy Now |
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Future Electronics | 1200V, 155A, E3-Pack, XPT IGBT MODULE RoHS: Compliant pbFree: Yes Min Qty: 5 Package Multiple: 5 Container: Box | 0Box |
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$132.7300 / $139.3700 | Buy Now |
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DISTI #
MIXA100W1200TEH
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TTI | IGBT Modules Six Pack SPT IGBT Min Qty: 5 Package Multiple: 5 Container: Box | Americas - 0 |
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$180.0400 | Buy Now |
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DISTI #
MIXA100W1200TEH
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TME | Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 | 0 |
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$155.0700 / $194.1100 | RFQ |
Part Details for MIXA100W1200TEH
MIXA100W1200TEH CAD Models
MIXA100W1200TEH Part Data Attributes:
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MIXA100W1200TEH
IXYS Corporation
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Datasheet
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MIXA100W1200TEH
IXYS Corporation
Insulated Gate Bipolar Transistor, 155A I(C), 1200V V(BR)CES,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MODULE-35 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 155 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X35 | |
| Number of Elements | 6 | |
| Number of Terminals | 35 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 350 ns | |
| Turn-on Time-Nom (ton) | 110 ns | |
| VCEsat-Max | 2.1 V |