Part Details for MJD31C by Motorola Semiconductor Products
Overview of MJD31C by Motorola Semiconductor Products
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for MJD31C
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1312 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-252 | 5 |
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$0.3600 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-252 | 78 |
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$0.2400 / $0.8000 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 150 |
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$1.0000 / $1.5400 | Buy Now |
Part Details for MJD31C
MJD31C CAD Models
MJD31C Part Data Attributes
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MJD31C
Motorola Semiconductor Products
Buy Now
Datasheet
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MJD31C
Motorola Semiconductor Products
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | DPAK-3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 15 W | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz | |
Turn-off Time-Max (toff) | 900 ns | |
VCEsat-Max | 1.2 V |