Part Details for MJD45H11TF by onsemi
Overview of MJD45H11TF by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for MJD45H11TF
MJD45H11TF CAD Models
MJD45H11TF Part Data Attributes
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MJD45H11TF
onsemi
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Datasheet
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MJD45H11TF
onsemi
8 A, 80 V PNP Power Bipolar Junction Transistor, 2000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AK | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 40 MHz |
Alternate Parts for MJD45H11TF
This table gives cross-reference parts and alternative options found for MJD45H11TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD45H11TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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KSH45H11 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | MJD45H11TF vs KSH45H11 |
MJD45H11TM | 8 A, 80 V PNP Power Bipolar Junction Transistor, 2500-REEL | onsemi | MJD45H11TF vs MJD45H11TM |
KSH45H11TM | PNP Epitaxial Silicon Transistor, 2500-REEL | onsemi | MJD45H11TF vs KSH45H11TM |
MJD45H11TF_NL | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | MJD45H11TF vs MJD45H11TF_NL |
MJD45H11 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | MJD45H11TF vs MJD45H11 |
KSH45H11TM_NL | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | MJD45H11TF vs KSH45H11TM_NL |