Part Details for MJE181 by Motorola Semiconductor Products
Overview of MJE181 by Motorola Semiconductor Products
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MJE181
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | Bipolar Junction Transistor, NPN Type, TO-126 | 1010 |
|
$0.2000 / $1.0000 | Buy Now |
Part Details for MJE181
MJE181 CAD Models
MJE181 Part Data Attributes:
|
|
MJE181
Motorola Semiconductor Products
Buy Now
Datasheet
|
Compare Parts:
MJE181
Motorola Semiconductor Products
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Base Capacitance-Max | 40 pF | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 12 | |
| JEDEC-95 Code | TO-225AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 12.5 W | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz | |
| VCEsat-Max | 1.7 V |