Part Details for MJE182 by Motorola Semiconductor Products
Overview of MJE182 by Motorola Semiconductor Products
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for MJE182
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 330 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-126 | 16 |
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$0.4170 / $0.5004 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-126 | 12 |
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$0.5000 / $1.0000 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-126 | 2111 |
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$0.8400 / $2.2400 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-126 | 264 |
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$37.5000 / $50.0000 | Buy Now |
Part Details for MJE182
MJE182 CAD Models
MJE182 Part Data Attributes
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MJE182
Motorola Semiconductor Products
Buy Now
Datasheet
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MJE182
Motorola Semiconductor Products
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Collector Current-Max (IC) | 3 A | |
Collector-Base Capacitance-Max | 40 pF | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 12 | |
JEDEC-95 Code | TO-225AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 12.5 W | |
Power Dissipation-Max (Abs) | 1.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 50 MHz | |
VCEsat-Max | 1.7 V |