Part Details for MMDF3N02HDR2 by Motorola Semiconductor Products
Overview of MMDF3N02HDR2 by Motorola Semiconductor Products
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Part Details for MMDF3N02HDR2
MMDF3N02HDR2 CAD Models
MMDF3N02HDR2 Part Data Attributes
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MMDF3N02HDR2
Motorola Semiconductor Products
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Datasheet
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MMDF3N02HDR2
Motorola Semiconductor Products
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SO-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 405 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.8 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 19 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |