Part Details for MRF8P20160HSR3 by Freescale Semiconductor
Overview of MRF8P20160HSR3 by Freescale Semiconductor
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for MRF8P20160HSR3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-MRF8P20160HSR3-ND
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DigiKey | RF MOSFET LDMOS 28V NI780 Min Qty: 2 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
883 In Stock |
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$164.6200 | Buy Now |
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Quest Components | 40 |
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$169.5240 / $197.7780 | Buy Now | |
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Rochester Electronics | RF Power Field-Effect Transistor, 2-Element, L Band, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 2952 |
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$141.2700 / $166.2000 | Buy Now |
Part Details for MRF8P20160HSR3
MRF8P20160HSR3 CAD Models
MRF8P20160HSR3 Part Data Attributes
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MRF8P20160HSR3
Freescale Semiconductor
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Datasheet
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MRF8P20160HSR3
Freescale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Package Description | ROHS COMPLIANT, NI-780S, CASE 465H-02, 4 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | CASE 465H-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | ESD PROTECTED | |
| Case Connection | SOURCE | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-XDFP-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |