Part Details for MSC040SMA120B by Microchip Technology Inc
Overview of MSC040SMA120B by Microchip Technology Inc
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MSC040SMA120B
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6570
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Newark | Mosfet, N-Ch, 1.2Kv, 66A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:66A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:323W Rohs Compliant: Yes |Microchip MSC040SMA120B Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 30 |
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$17.0600 | Buy Now |
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DISTI #
MSC040SMA120B-ND
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DigiKey | SICFET N-CH 1200V 66A TO247-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube |
51 In Stock |
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$18.2601 / $24.2300 | Buy Now |
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DISTI #
MSC040SMA120B
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Avnet Americas | Silicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Rail/Tube (Alt: MSC040SMA120B) RoHS: Not Compliant Min Qty: 60 Package Multiple: 30 Container: Tube | 0 |
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$18.1300 / $24.2300 | Buy Now |
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DISTI #
78AH6570
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Avnet Americas | Silicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Bulk (Alt: 78AH6570) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 40 Weeks, 1 Days Container: Bulk | 30 Partner Stock |
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$23.2300 / $25.2000 | Buy Now |
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DISTI #
494-MSC040SMA120B
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Mouser Electronics | MOSFET MOSFET SIC 1200 V 40 mOhm TO-247 RoHS: Compliant | 385 |
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$19.4400 / $24.2300 | Buy Now |
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DISTI #
V36:1790_21374926
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 64A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2114 | Americas - 2 |
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$16.9300 | Buy Now |
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DISTI #
MSC040SMA120B
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Microchip Technology Inc | MOSFET SIC 1200 V 40 mOhm TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$18.1300 / $24.2300 | Buy Now |
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Future Electronics | 1200 V 66A 323W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$18.4900 / $18.8600 | Buy Now |
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Onlinecomponents.com | Silicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 |
60 In Stock 2010 Factory Stock |
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$17.2000 / $20.9800 | Buy Now |
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DISTI #
69275925
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Verical | Trans MOSFET N-CH SiC 1.2KV 64A 3-Pin(3+Tab) TO-247 Tube Min Qty: 3 Package Multiple: 1 Date Code: 2326 | Americas - 60 |
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$22.3184 / $25.8693 | Buy Now |
Part Details for MSC040SMA120B
MSC040SMA120B CAD Models
MSC040SMA120B Part Data Attributes:
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MSC040SMA120B
Microchip Technology Inc
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Datasheet
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Compare Parts:
MSC040SMA120B
Microchip Technology Inc
Power Field-Effect Transistor, 66A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 40 Weeks, 1 Day | |
| Samacsys Manufacturer | Microchip | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 66 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 17 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 323 W | |
| Pulsed Drain Current-Max (IDM) | 105 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |