Datasheets
MT41J256M16RE-125:D by:

DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96

Part Details for MT41J256M16RE-125:D by Micron Technology Inc

Overview of MT41J256M16RE-125:D by Micron Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for MT41J256M16RE-125:D

Part # Distributor Description Stock Price Buy
DISTI # MT41J256M16RE-125:
Avnet Americas DRAM Chip DDR3 SDRAM 4G-Bit 256Mx16 1.5V 96-Pin F-BGA - Bulk (Alt: MT41J256M16RE-125:) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Bulk 0
RFQ
DISTI # MT41J256M16RE-125:
Avnet Americas DRAM Chip DDR3 SDRAM 4G-Bit 256Mx16 1.5V 96-Pin F-BGA - Bulk (Alt: MT41J256M16RE-125:) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Bulk 0
RFQ
Velocity Electronics Our Stock 15
RFQ
Chip1Cloud   6000
RFQ

Part Details for MT41J256M16RE-125:D

MT41J256M16RE-125:D CAD Models

MT41J256M16RE-125:D Part Data Attributes:

MT41J256M16RE-125:D Micron Technology Inc
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MT41J256M16RE-125:D Micron Technology Inc DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA96,9X16,32
Pin Count 96
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Samacsys Manufacturer Micron
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.225 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-30 Code R-PBGA-B96
JESD-609 Code e1
Length 14 mm
Memory Density 4294967296 bit
Memory IC Type DDR3 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 8
Standby Current-Max 0.02 A
Supply Current-Max 0.32 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for MT41J256M16RE-125:D

This table gives cross-reference parts and alternative options found for MT41J256M16RE-125:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41J256M16RE-125:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT41J256M16RE-125IT:D DDR DRAM, 256MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT41J256M16RE-125:D vs MT41J256M16RE-125IT:D
Part Number Description Manufacturer Compare
H5TQ4G63MFR-G7I DDR DRAM, 256MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-G7I
H5TQ4G63MFR-H9J DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-H9J
H5TQ4G63MFR-H9I DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-H9I
MT41J256M16RE-15E:D DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41J256M16RE-125:D vs MT41J256M16RE-15E:D
H5TQ4G63MFR-H9C DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-H9C
H5TQ4G63MFR-RDC DDR DRAM, 256MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-RDC
MT41J256M16RE-15EIT:D DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41J256M16RE-125:D vs MT41J256M16RE-15EIT:D
H5TQ4G63MFR-G7C DDR DRAM, 256MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-G7C
H5TQ4G63MFR-G7J DDR DRAM, 256MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J256M16RE-125:D vs H5TQ4G63MFR-G7J
MT41J256M16RE-125IT:D DDR DRAM, 256MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT41J256M16RE-125:D vs MT41J256M16RE-125IT:D

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