Part Details for MT41J256M8JE-187E:A by Micron Technology Inc
Overview of MT41J256M8JE-187E:A by Micron Technology Inc
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for MT41J256M8JE-187E:A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 19 |
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RFQ |
Part Details for MT41J256M8JE-187E:A
MT41J256M8JE-187E:A CAD Models
MT41J256M8JE-187E:A Part Data Attributes
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MT41J256M8JE-187E:A
Micron Technology Inc
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Datasheet
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MT41J256M8JE-187E:A
Micron Technology Inc
DDR DRAM, 32MX8, 0.3ns, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | 12.50 X 15 MM, LEAD FREE, FBGA-82 | |
| Pin Count | 82 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.3 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 533 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B82 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 82 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA82,11X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Standby Current-Max | 0.012 A | |
| Supply Current-Max | 0.43 mA | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 12.5 mm |
Alternate Parts for MT41J256M8JE-187E:A
This table gives cross-reference parts and alternative options found for MT41J256M8JE-187E:A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41J256M8JE-187E:A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT41J256M8JE-25:A | DDR DRAM, 32MX8, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82 | Micron Technology Inc | MT41J256M8JE-187E:A vs MT41J256M8JE-25:A |
| H5TQ2G83BFR-H9L | DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 | SK Hynix Inc | MT41J256M8JE-187E:A vs H5TQ2G83BFR-H9L |
| MT41J256M8JE-187IT:B | DDR DRAM, 256MX8, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82 | Micron Technology Inc | MT41J256M8JE-187E:A vs MT41J256M8JE-187IT:B |
| MT41J256M8JE-15E:A | DDR DRAM, 32MX8, 0.255ns, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82 | Micron Technology Inc | MT41J256M8JE-187E:A vs MT41J256M8JE-15E:A |
| H5TQ2G83BFR-RDI | DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 | SK Hynix Inc | MT41J256M8JE-187E:A vs H5TQ2G83BFR-RDI |
| H5TQ2G83BFR-PBJ | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 | SK Hynix Inc | MT41J256M8JE-187E:A vs H5TQ2G83BFR-PBJ |
| MT41J256M8JE-15E:B | DDR DRAM, 256MX8, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82 | Micron Technology Inc | MT41J256M8JE-187E:A vs MT41J256M8JE-15E:B |
| H5TQ2G83BFR-H9J | DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 | SK Hynix Inc | MT41J256M8JE-187E:A vs H5TQ2G83BFR-H9J |
| MT41J256M8JE-15IT:B | DDR DRAM, 256MX8, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82 | Micron Technology Inc | MT41J256M8JE-187E:A vs MT41J256M8JE-15IT:B |
| H5TQ2G83BFR-PBC | DDR DRAM, 256MX8, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 | SK Hynix Inc | MT41J256M8JE-187E:A vs H5TQ2G83BFR-PBC |