Datasheets
MT46V16M16P-5B:K by:

DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66

Part Details for MT46V16M16P-5B:K by Micron Technology Inc

Overview of MT46V16M16P-5B:K by Micron Technology Inc

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Price & Stock for MT46V16M16P-5B:K

Part # Distributor Description Stock Price Buy
Bristol Electronics   29
RFQ
Bristol Electronics   470
RFQ
Quest Components 16M X 16 DDR DRAM, 0.7 ns, PDSO66 335
  • 1 $14.8500
  • 83 $11.5500
  • 174 $10.5600
$10.5600 / $14.8500 Buy Now
Chip 1 Exchange INSTOCK 36
RFQ
Win Source Electronics LPDDR-400 16Mx16 Pb-Free 3242
  • 9 $5.6530
  • 22 $4.6380
  • 34 $4.4930
  • 46 $4.3480
  • 60 $4.2030
  • 80 $3.7690
$3.7690 / $5.6530 Buy Now

Part Details for MT46V16M16P-5B:K

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MT46V16M16P-5B:K Part Data Attributes

MT46V16M16P-5B:K Micron Technology Inc
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MT46V16M16P-5B:K Micron Technology Inc DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code TSOP
Package Description 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e3
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.004 A
Supply Current-Max 0.29 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.5 V
Supply Voltage-Nom (Vsup) 2.6 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm

Alternate Parts for MT46V16M16P-5B:K

This table gives cross-reference parts and alternative options found for MT46V16M16P-5B:K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V16M16P-5B:K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46V16M16TG-5BAT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16TG-5BAT:K
MT46V16M16TG-5B:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16TG-5B:K
MT46V16M16P-5BIT:KTR DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-5BIT:KTR
MT46V16M16P-5BIT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-5BIT:K
MT46V16M16TG-5BIT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16TG-5BIT:K
MT46V16M16P-5BAT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-5BAT:K
Part Number Description Manufacturer Compare
MT46V16M16TG-6TAT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16TG-6TAT:K
EDD2516AMTA-5B DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Elpida Memory Inc MT46V16M16P-5B:K vs EDD2516AMTA-5B
EDD2516AKTA-5C DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Elpida Memory Inc MT46V16M16P-5B:K vs EDD2516AKTA-5C
MT46V16M16P-6TAT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-6TAT:K
HY5DU561622ELTP-D43I DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.875 X 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 SK Hynix Inc MT46V16M16P-5B:K vs HY5DU561622ELTP-D43I
MT46V16M16P-6TLAT:K DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-6TLAT:K
MT46V16M16TG-5BL:C DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16TG-5BL:C
MT46V16M16P-5BLIT:M DDR DRAM, Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-5BLIT:M
HY5DU561622ETP-36 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 SK Hynix Inc MT46V16M16P-5B:K vs HY5DU561622ETP-36
MT46V16M16P-6LAT:F DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc MT46V16M16P-5B:K vs MT46V16M16P-6LAT:F

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