Datasheets
MT48H32M16LFBF-75IT:B by:

Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, GREEN, VFBGA-54

Part Details for MT48H32M16LFBF-75IT:B by Micron Technology Inc

Overview of MT48H32M16LFBF-75IT:B by Micron Technology Inc

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Applications Education and Research Consumer Electronics Internet of Things (IoT) Computing and Data Storage Electronic Manufacturing

Price & Stock for MT48H32M16LFBF-75IT:B

Part # Distributor Description Stock Price Buy
Bristol Electronics   1
RFQ
Quest Components 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 1
  • 1 $11.0000
$11.0000 Buy Now
Chip1Cloud DRAM Chip Mobile LPSDR SDRAM 512Mbit 32Mx16 1.8V 54-Pin VFBGA Tray 9800
RFQ

Part Details for MT48H32M16LFBF-75IT:B

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MT48H32M16LFBF-75IT:B Part Data Attributes:

MT48H32M16LFBF-75IT:B Micron Technology Inc
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MT48H32M16LFBF-75IT:B Micron Technology Inc Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, GREEN, VFBGA-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description VFBGA, BGA54,9X9,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B54
JESD-609 Code e1
Length 9 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A
Supply Current-Max 0.09 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm

Alternate Parts for MT48H32M16LFBF-75IT:B

This table gives cross-reference parts and alternative options found for MT48H32M16LFBF-75IT:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48H32M16LFBF-75IT:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48H32M16LFBF-75LIT:B Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, GREEN, VFBGA-54 Micron Technology Inc MT48H32M16LFBF-75IT:B vs MT48H32M16LFBF-75LIT:B
W989D6CBGX7G DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, 0.80 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-54 Winbond Electronics Corp MT48H32M16LFBF-75IT:B vs W989D6CBGX7G
Part Number Description Manufacturer Compare
K4M511533E-YC750 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 Samsung Semiconductor MT48H32M16LFBF-75IT:B vs K4M511533E-YC750
MT48V32M16LFFN-75 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 10 X 12.50 MM, VFBGA-54 Micron Technology Inc MT48H32M16LFBF-75IT:B vs MT48V32M16LFFN-75
MT48H32M16LFFN-75IT Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 10 X 12.50 MM, VFBGA-54 Micron Technology Inc MT48H32M16LFBF-75IT:B vs MT48H32M16LFFN-75IT
K4M511633E-PC1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H32M16LFBF-75IT:B vs K4M511633E-PC1H0
IS42S16320D-7BL Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, TFBGA-54 Integrated Silicon Solution Inc MT48H32M16LFBF-75IT:B vs IS42S16320D-7BL
K4S511533C-YP80 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor MT48H32M16LFBF-75IT:B vs K4S511533C-YP80
IS45S16320B-6BLA1 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 11 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-54 Integrated Silicon Solution Inc MT48H32M16LFBF-75IT:B vs IS45S16320B-6BLA1
K4S51163LF-YC1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor MT48H32M16LFBF-75IT:B vs K4S51163LF-YC1H0
K4M511533E-YF1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 Samsung Semiconductor MT48H32M16LFBF-75IT:B vs K4M511533E-YF1H0
K4M511633C-BG1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H32M16LFBF-75IT:B vs K4M511633C-BG1H0

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