Part Details for MTB3N60E by onsemi
Overview of MTB3N60E by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for MTB3N60E
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 3A, 600V, 2.2ohm, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 550 |
|
$0.4448 / $0.5233 | Buy Now |
Part Details for MTB3N60E
MTB3N60E CAD Models
MTB3N60E Part Data Attributes:
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MTB3N60E
onsemi
Buy Now
Datasheet
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Compare Parts:
MTB3N60E
onsemi
3A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 2.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |